A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content. A second fin structure having a second strain is located on a surface of a second insulator layer portion. The second fin structure includes a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having the third germanium content, wherein the first germanium content differs from the second germanium content and the third germanium content is greater than the first and second germanium contents, and wherein the first strain differs from the second strain.