Invention Grant
- Patent Title: Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
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Application No.: US14167216Application Date: 2014-01-29
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Publication No.: US09755061B2Publication Date: 2017-09-05
- Inventor: Shirou Ozaki , Naoya Okamoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2013-054928 20130318
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H02M3/335 ; H03F3/16 ; H01L29/51 ; H01L21/28 ; H03F1/32 ; H01L29/417 ; H01L29/423 ; H01L29/20
Abstract:
A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.
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