Invention Grant
- Patent Title: Patterned structure of a semiconductor device and a manufacturing method thereof
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Application No.: US14710602Application Date: 2015-05-13
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Publication No.: US09755048B2Publication Date: 2017-09-05
- Inventor: Rai-Min Huang , I-Ming Tseng , Tong-Jyun Huang , Kuan-Hsien Li
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW104110484A 20150331
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L21/311 ; H01L29/40 ; H01L27/088 ; H01L21/8234 ; H01L21/027 ; H01L21/308
Abstract:
A patterned structure of a semiconductor device includes a substrate, a first feature and a second feature. The first feature and the second feature are disposed on the substrate, and either of which includes a vertical segment and a horizontal segment. There is a distance between the vertical segment of the first feature and the vertical segment of the second feature, and the distance is less than the minimum exposure limits of an exposure apparatus.
Public/Granted literature
- US20160293726A1 PATTERNED STRUCTURE OF A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2016-10-06
Information query
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