Invention Grant
- Patent Title: Photoelectrochemical cell including Ga(Sbx)N1-x semiconductor electrode
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Application No.: US13630875Application Date: 2012-09-28
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Publication No.: US09755023B2Publication Date: 2017-09-05
- Inventor: Madhu Menon , Michael Sheetz , Mahendra Kumar Sunkara , Chandrashekhar Pendyala , Swathi Sunkara , Jacek B. Jasinski
- Applicant: The University of Kentucky Research Foundation , The University Of Louisville Research Foundation, Inc.
- Applicant Address: US KY Lexington US KY Louisville
- Assignee: The University of Kentucky Research Foundation,The University of Louisville Research Foundation, Inc.
- Current Assignee: The University of Kentucky Research Foundation,The University of Louisville Research Foundation, Inc.
- Current Assignee Address: US KY Lexington US KY Louisville
- Agency: King & Schickli, PLLC
- Main IPC: C25B1/04
- IPC: C25B1/04 ; H01L29/20 ; H01L21/02 ; C25B1/00
Abstract:
The composition of matter comprising Ga(Sbx)N1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
Public/Granted literature
- US20130081940A1 PHOTOELECTROCHEMICAL CELL INCLUDING Ga(Sbx)N1-x SEMICONDUCTOR ELECTRODE Public/Granted day:2013-04-04
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