A memory device includes a substrate, a first conductive layer above the substrate and extending in a first direction parallel to a surface of the substrate, a second conductive layer above the first conductive layer and extending in the first direction, wherein centers of the first and second conductive layers are aligned in a second direction that is substantially perpendicular to the surface of the substrate, and a contact extending in the second direction from a position lower than the first conductive layer to a position higher than the second conductive layer, the contact being electrically connected to and in direct contact with the first conductive layer and electrically insulated and physically separated from the second conductive layer.