Invention Grant
- Patent Title: Semiconductor device and operation method for same
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Application No.: US14709699Application Date: 2015-05-12
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Publication No.: US09754998B2Publication Date: 2017-09-05
- Inventor: Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
- Applicant: NEC Corporation
- Applicant Address: JP Tokyo
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-136988 20100616
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C13/00 ; H01L27/10

Abstract:
A semiconductor device, includes first, second, and third switching elements. The third switching element comprises first and second terminals. Each of the first and second switching elements comprise a unified ion conductor, a first electrode disposed to contact the ion conductor and supply metal ions thereto, and a second electrode disposed to contact the ion conductor and is less susceptible to ionization than the first electrode. The first electrodes of the first switching element and the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected, or the second electrode of the first switching element and the second electrode of the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected.
Public/Granted literature
- US20150318473A1 SEMICONDUCTOR DEVICE AND OPERATION METHOD FOR SAME Public/Granted day:2015-11-05
Information query
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