Invention Grant
- Patent Title: Dual-material mandrel for epitaxial crystal growth on silicon
-
Application No.: US15155898Application Date: 2016-05-16
-
Publication No.: US09754969B2Publication Date: 2017-09-05
- Inventor: Sanghoon Lee , Effendi Leobandung , Brent A. Wacaser
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Louis Percello
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L27/12 ; H01L21/8234 ; H01L21/306 ; H01L21/02 ; H01L21/308 ; H01L29/66 ; H01L21/3105 ; H01L21/84 ; H01L27/088 ; H01L29/78 ; H01L29/04 ; H01L29/06 ; H01L29/16 ; H01L29/10 ; H01L29/165 ; H01L29/267 ; H01L29/20 ; H01L29/22
Abstract:
In one example, a method for fabricating a semiconductor device includes etching a layer of silicon to form a plurality of fins and growing layers of a semiconductor material directly on sidewalls of the plurality of fins, wherein the semiconductor material and surfaces of the sidewalls have different crystalline properties.
Public/Granted literature
- US20170025500A1 DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON Public/Granted day:2017-01-26
Information query
IPC分类:
