The present disclosure may provide a semiconductor device with an enhanced integration. The device may include a lower pipe gate; an upper pipe gate including a first horizontal portion and first and second protrusions, the first horizontal portion being parallel to the lower pipe gate, the first and second protrusions extending from the first horizontal portion to the lower pipe gate and crossing each other so as to define a pipe channel region; a partition pipe gate disposed between the lower and upper pipe gates, the partition pipe gate dividing the pipe channel region into first and second pipe channel regions; and first and second pipe channel films disposed respectively in the first and second pipe channel regions.