- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US15296330Application Date: 2016-10-18
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Publication No.: US09754876B2Publication Date: 2017-09-05
- Inventor: Kenichirou Kusano
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Volentine & Whitt, PLLC
- Priority: JP2015-208372 20151022
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L23/525 ; H01L23/528 ; H01L23/31

Abstract:
A semiconductor device including: a fuse element; and a fuse window that is formed above a region including the fuse element, that includes a pair of first sidewalls extending in a first direction running along a direction that current flows in the fuse element and a pair of second sidewalls extending in a second direction intersecting the first direction, and that is formed with a projection projecting out from a sidewall side toward the inside at an inner wall of at least one out of the first sidewalls or the second sidewalls, the projection having a sidewall side width that is narrower than a projecting side width.
Public/Granted literature
- US20170117221A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2017-04-27
Information query
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