- Patent Title: Double sided NMOS/PMOS structure and methods of forming the same
-
Application No.: US14878312Application Date: 2015-10-08
-
Publication No.: US09754844B2Publication Date: 2017-09-05
- Inventor: Jam-Wem Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/768 ; H01L27/06 ; H01L21/265 ; H01L21/762 ; H01L25/065 ; H01L25/00 ; H01L29/04

Abstract:
A chip includes a dielectric layer having a top surface and a bottom surface, a first semiconductor layer overlying and bonded to the top surface of the dielectric layer, and a first Metal Oxide-Semiconductor (MOS) transistor of a first conductivity type. The first MOS transistor includes a first gate dielectric overlying and contacting the first semiconductor layer, and a first gate electrode overlying the first gate dielectric. A second semiconductor layer is underlying and bonded to the bottom surface of the dielectric layer. A second MOS transistor of a second conductivity type opposite to the first conductivity type includes a second gate dielectric underlying and contacting the second semiconductor layer, and a second gate electrode underlying the second gate dielectric.
Public/Granted literature
- US20160027704A1 Double Sided NMOS/PMOS Structure and Methods of Forming the Same Public/Granted day:2016-01-28
Information query
IPC分类: