Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
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Application No.: US15155478Application Date: 2016-05-16
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Publication No.: US09754826B2Publication Date: 2017-09-05
- Inventor: Jong-Won Hong , Hei-Seung Kim , Kyoung-Hee Nam , In-Sun Park , Jong-Myeong Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0126479 20111130
- Main IPC: H01L21/763
- IPC: H01L21/763 ; H01L21/768 ; H01L23/532 ; H01L27/11529 ; H01L21/288 ; H01L27/108
Abstract:
A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.
Public/Granted literature
- US20160260635A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2016-09-08
Information query
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