Thermal doping by vacancy formation in nanocrystals

Invention Grant

US09754802B2 Thermal doping by vacancy formation in nanocrystals 有权

Patent Title: Thermal doping by vacancy formation in nanocrystals
Application No.: US14903128

Application Date: 2014-07-10
Publication No.: US09754802B2

Publication Date: 2017-09-05
Inventor: Uri Banin , Kathy Vinokurov , Oded Millo , Yehonadav Bekenstein
Applicant: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
Applicant Address: IL Jerusalem
Assignee: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
Current Assignee: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
Current Assignee Address: IL Jerusalem
Agency: Oliff PLC
International Application: PCT/IL2014/050621 WO 20140710
International Announcement: WO2015/004666 WO 20150115
Main IPC: H01L21/477
IPC: H01L21/477 ; H01L29/06 ; H01L29/24 ; B82Y10/00 ; B82Y40/00 ; H01L29/22 ; H01L29/227

Abstract:

The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.

Public/Granted literature

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/477	.....用于改善半导体材料性能的热处理，例如退火、烧结（H01L21/36至H01L21/449，H01L21/461至H01L21/475优先）