Invention Grant
- Patent Title: Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
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Application No.: US14691904Application Date: 2015-04-21
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Publication No.: US09754786B2Publication Date: 2017-09-05
- Inventor: Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
- Applicant: Entegris, Inc.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Main IPC: H01J27/22
- IPC: H01J27/22 ; H01L21/22 ; H01J37/08 ; H01J37/317 ; F17C7/00 ; H01L21/265 ; H01J37/30 ; H01L21/223
Abstract:
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Public/Granted literature
- US20150228486A1 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM Public/Granted day:2015-08-13
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