Invention Grant
- Patent Title: RF pulse reflection reduction for processing substrates
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Application No.: US15212879Application Date: 2016-07-18
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Publication No.: US09754767B2Publication Date: 2017-09-05
- Inventor: Katsumasa Kawasaki
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J37/32

Abstract:
Methods and systems for RF pulse reflection reduction in process chambers are provided herein. In some embodiments, a method includes (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators during a first time period, (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms, (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power, and controlling at least one of a match network or the RF generator to reduce the highest level of reflected power, (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.
Public/Granted literature
- US20170103873A1 RF PULSE REFLECTION REDUCTION FOR PROCESSING SUBSTRATES Public/Granted day:2017-04-13
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