Invention Grant
- Patent Title: Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
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Application No.: US14895794Application Date: 2014-05-28
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Publication No.: US09754706B2Publication Date: 2017-09-05
- Inventor: Toshiaki Fujita , Hiroshi Tanaka , Noriaki Nagatomo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2013-119167 20130605; JP2013-154694 20130725; JP2013-154696 20130725
- International Application: PCT/JP2014/064894 WO 20140528
- International Announcement: WO2014/196583 WO 20141211
- Main IPC: H01C7/10
- IPC: H01C7/10 ; H01C7/00 ; G01K7/22 ; H01C7/04 ; H01C17/12 ; C23C14/00 ; C23C14/06 ; C30B29/38
Abstract:
Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1−vVv)xAly(N1−wOw)z (where 0.0
Public/Granted literature
- US20160125982A1 METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR Public/Granted day:2016-05-05
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