Invention Grant
- Patent Title: Three-dimensional NAND non-volatile memory and DRAM memory devices on a single substrate
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Application No.: US14935188Application Date: 2015-11-06
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Publication No.: US09754667B2Publication Date: 2017-09-05
- Inventor: Johann Alsmeier
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C16/04 ; H01L27/108 ; H01L27/11551 ; H01L27/11578 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L27/11582
Abstract:
A three-dimensional NAND stacked non-volatile memory array and a DRAM memory array are provided. The three-dimensional NAND stacked non-volatile memory array and the DRAM memory array are integrated on a single substrate.
Public/Granted literature
- US20160064079A1 THREE-DIMENSIONAL NAND NON-VOLATILE MEMORY AND DRAM MEMORY DEVICES ON A SINGLE SUBSTRATE Public/Granted day:2016-03-03
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