Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US15051481Application Date: 2016-02-23
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Publication No.: US09754642B2Publication Date: 2017-09-05
- Inventor: Teruo Takagiwa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2015-034095 20150224
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/06 ; G11C16/04 ; G11C16/10 ; G11C16/26 ; G11C29/00 ; G11C29/12 ; G11C29/44

Abstract:
A semiconductor memory device includes a plurality of memory cells, a data bus connected to a first column of the memory cells, by which data is transferred to and from the memory cells of the first column, a data latch storing data indicating whether the first column is defective or not, and a transistor having a first terminal connected to the data bus, a second terminal connected to a voltage source, and a gate connected to an output of the data latch.
Public/Granted literature
- US20160247549A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2016-08-25
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