Invention Grant
- Patent Title: Termination structure for gallium nitride schottky diode
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Application No.: US15189951Application Date: 2016-06-22
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Publication No.: US09728655B2Publication Date: 2017-08-08
- Inventor: TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-Se Ho
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/66 ; H01L25/18 ; H01L29/861 ; H01L29/20 ; H01L29/40 ; H01L21/02 ; H01L21/306 ; H01L21/311 ; H01L27/02 ; H01L29/06 ; H01L23/00
Abstract:
A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.
Public/Granted literature
- US20160372610A1 Termination structure for gallium nitride schottky diode Public/Granted day:2016-12-22
Information query
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