Invention Grant
- Patent Title: Retaining strain in finFET devices
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Application No.: US14932112Application Date: 2015-11-04
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Publication No.: US09728642B2Publication Date: 2017-08-08
- Inventor: Bruce B. Doris , Gauri Karve , Fee Li Lie , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L21/308 ; H01L29/16 ; H01L29/161
Abstract:
A method for fabricating a semiconductor device comprises patterning a strained fin from a strained layer of semiconductor material arranged on a substrate, depositing a first layer of semiconductor material on the fin and exposed portions of the substrate, patterning and etching to remove a portion of the first layer of semiconductor material and a portion of the fin to expose a portion of the substrate, depositing a second layer of semiconductor material on exposed portions of the substrate and the first layer of semiconductor material, and patterning and etching to remove a portion of the second layer of semiconductor material layer and the first layer of semiconductor material to define a dummy gate stack, the dummy gate stack is operative to substantially maintain the strain in the strained fin.
Public/Granted literature
- US20170125577A1 RETAINING STRAIN IN FINFET DEVICES Public/Granted day:2017-05-04
Information query
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