Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US15223597Application Date: 2016-07-29
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Publication No.: US09728641B2Publication Date: 2017-08-08
- Inventor: Yen-Ru Lee , Ming-Hua Yu , Tze-Liang Lee , Chii-Horng Li , Pang-Yen Tsai , Lilly Su , Yi-Hung Lin , Yu-Hung Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L21/306 ; H01L29/04 ; H01L29/06 ; H01L29/08 ; H01L21/02 ; H01L21/3065 ; H01L21/308 ; H01L29/66
Abstract:
A method of fabricating a semiconductor device. The method includes forming an isolation feature in a substrate, forming a first gate stack and a second gate stack over the substrate, forming a first recess cavity and a second recess cavity in the substrate, growing a first epitaxial (epi) material in the first recess cavity and a second epi material in the second recess cavity, and etching the first epi material and the second epi material. The first recess cavity is between the isolation feature and the first gate stack and the second recess cavity is between the first gate stack and the second gate stack. A topmost surface of the first epi material has a first crystal plane and a topmost surface of the second epi material has a second crystal plane. The topmost surface of the etched first epi material has a third crystal plane different from both the first crystal plane and the second crystal plane.
Public/Granted literature
- US20160336448A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2016-11-17
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