Invention Grant
- Patent Title: Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer
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Application No.: US14389185Application Date: 2012-11-01
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Publication No.: US09728609B2Publication Date: 2017-08-08
- Inventor: Tetsuo Narita , Kenji Ito , Kazuyoshi Tomita , Nobuyuki Otake , Shinichi Hoshi , Masaki Matsui
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , DENSO CORPORATION
- Applicant Address: JP Nagakute JP Kariya
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,DENSO CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,DENSO CORPORATION
- Current Assignee Address: JP Nagakute JP Kariya
- Agency: Oliff PLC
- Priority: JP2012-074182 20120328
- International Application: PCT/JP2012/078390 WO 20121101
- International Announcement: WO2013/145404 WO 20131003
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/20 ; C30B29/40 ; H01L21/02 ; C30B25/08 ; C30B25/18 ; H01L29/04 ; H01L33/00
Abstract:
A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
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