Invention Grant
- Patent Title: Method for depositing one or more polycrystalline silicon layers on substrate
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Application No.: US14009838Application Date: 2012-03-30
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Publication No.: US09728452B2Publication Date: 2017-08-08
- Inventor: Veli Matti Airaksinen , Jari Makinen
- Applicant: Veli Matti Airaksinen , Jari Makinen
- Applicant Address: FI Vantaa
- Assignee: OKMETIC OYJ
- Current Assignee: OKMETIC OYJ
- Current Assignee Address: FI Vantaa
- Agency: Young & Thompson
- Priority: FI20115321 20110404
- International Application: PCT/FI2012/050325 WO 20120330
- International Announcement: WO2012/136888 WO 20121011
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; C23C16/04 ; C23C16/24 ; H01L21/285 ; H01L23/48
Abstract:
A method for depositing one or more polycrystalline silicon layers (230c) on a substrate (210) by a chemical vapor deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.
Public/Granted literature
- US20140061867A1 METHOD FOR DEPOSITING ONE OR MORE POLYCRYSTALLINE SILICON LAYERS ON SUBSTRATE Public/Granted day:2014-03-06
Information query
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