Invention Grant
- Patent Title: Method of fabricating semiconductor device
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Application No.: US14938941Application Date: 2015-11-12
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Publication No.: US09728446B2Publication Date: 2017-08-08
- Inventor: Ingoo Kang , Dong-Min Kang , Sangkyun Kim , Yun-Jeong Kim , Jungsik Choi , Young Taek Hong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0156524 20131216
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C11D11/00 ; C11D7/06 ; C11D7/50 ; H01L21/3105 ; H01L21/02 ; H01L21/033 ; H01L21/311 ; H01L21/3213 ; C11D7/32 ; B08B1/00 ; B08B3/12 ; B08B7/04 ; H01L27/11582
Abstract:
Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.
Public/Granted literature
- US20160071762A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2016-03-10
Information query
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