The present invention relates to a new semiconductive composition, which comprises 50 to 98 weight percentage (wt %) of a polymer blend, 2 to 50 wt % of a conductive filler and 0.05 to 2 wt % of an antioxidant; wherein said polymer blend comprises 10 to 99 wt % of a multimodal high density polyolefin, which high density polyolefin has a density which is from 930 to 970 kg/m3 and a melt flow rate (MFR2@190° C.) according to ISO 1133 (190° C., 2.16 kg) which is less than 1.6 g/10 min, and 1 to 90 wt % of a thermoplastic elastomer, a process for producing a semiconductive composition, and a semiconductive jacket comprising the semiconductive composition, and a power cable comprising the semiconductive jacket or comprising the semiconductive composition, or use of a semiconductive jacket or a semiconductive composition in, for example, a power cable.