Invention Grant
- Patent Title: Method of repairing non-volatile memory based storage device and method of operating electronic system including the storage device
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Application No.: US14813420Application Date: 2015-07-30
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Publication No.: US09728277B2Publication Date: 2017-08-08
- Inventor: Joon Ho Lee , Jong Tae Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC.
- Priority: KR10-2014-0100550 20140805
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G11C29/44 ; G11C29/38 ; G06F11/07 ; G06F11/14 ; G11C29/00 ; G11C29/04

Abstract:
A method of repairing a storage device including a non-volatile memory includes powering on the storage device, performing a booting sequence, determining whether an error has occurred during the booting sequence or during a normal mode, writing a failure signature to a predetermined signature address in the non-volatile memory upon determining that the error has occurred, reporting a failure to a host upon writing the failure signature, entering into a repair mode upon reporting the failure, and operating in the normal mode upon determining that the error has not occurred.
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