Invention Grant
- Patent Title: Nonvolatile memory device, operating method thereof, and data storage device including the same
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Application No.: US14789441Application Date: 2015-07-01
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Publication No.: US09728264B2Publication Date: 2017-08-08
- Inventor: Tae Hoon Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0028337 20150227
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/26 ; G11C11/56 ; G11C16/10

Abstract:
A nonvolatile memory device includes a memory cell array including a data cell area, and a mode cell area that stores write mode information of the data cell area, a mode information storage block storing previous write mode information read out from the mode cell area in a previous read operation, and a control logic reading out the write mode information from the mode cell area comparing the read-out write mode information and the previous write mode information, and reading the data cell area in a read mode selected based on a comparison result.
Public/Granted literature
- US20160253124A1 NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND DATA STORAGE DEVICE INCLUDING THE SAME Public/Granted day:2016-09-01
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