Invention Grant
- Patent Title: Optical device structure using GaN substrates for laser applications
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Application No.: US14736939Application Date: 2015-06-11
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Publication No.: US09722398B2Publication Date: 2017-08-01
- Inventor: James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz Elsass , Yu-Chia Chang
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01S5/22 ; H01S5/02 ; H01S5/028 ; H01S5/20 ; H01S5/32 ; H01S5/343 ; B82Y20/00 ; H01L21/02

Abstract:
An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
Public/Granted literature
- US20160006217A1 OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS Public/Granted day:2016-01-07
Information query
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