An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.