Invention Grant
- Patent Title: Semiconductor device having a stacked metal oxide
-
Application No.: US15050895Application Date: 2016-02-23
-
Publication No.: US09722092B2Publication Date: 2017-08-01
- Inventor: Kosei Noda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2015-035184 20150225
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/12 ; H01L29/786
Abstract:
To provide a transistor with favorable electrical characteristics. A semiconductor device includes a first insulator over a substrate; a first metal oxide over the first insulator; a second metal oxide over the first metal oxide; a first conductor and a second conductor over the second metal oxide; a third metal oxide over the second metal oxide, the first conductor, and the second conductor; a second insulator over the third metal oxide; and a third conductor over the second insulator. The second metal oxide includes a region in contact with a top surface of the first metal oxide and regions in contact with side surfaces of the first metal oxide. The second metal oxide includes channel formation regions.
Public/Granted literature
- US20160247929A1 Semiconductor Device Public/Granted day:2016-08-25
Information query
IPC分类:
