Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15014842Application Date: 2016-02-03
-
Publication No.: US09722065B1Publication Date: 2017-08-01
- Inventor: Yu-Syuan Lin , Jiun-Lei Yu , Ming-Cheng Lin , Chun Lin Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/06 ; H01L29/47
Abstract:
A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.
Public/Granted literature
- US20170222031A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-08-03
Information query
IPC分类:
