Invention Grant
- Patent Title: Apparatus and method for FinFETs
-
Application No.: US14845733Application Date: 2015-09-04
-
Publication No.: US09722051B2Publication Date: 2017-08-01
- Inventor: Yi-Jing Lee , You-Ru Lin , Cheng-Tien Wan , Cheng-Hsien Wu , Chih-Hsin Ko
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/78 ; H01L21/762 ; H01L27/088 ; H01L21/306 ; H01L21/3065
Abstract:
A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
Public/Granted literature
- US20150380527A1 Apparatus and Method for FinFETs Public/Granted day:2015-12-31
Information query
IPC分类:
