Invention Grant
- Patent Title: Doped zinc oxide as n+ layer for semiconductor devices
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Application No.: US15064190Application Date: 2016-03-08
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Publication No.: US09722033B2Publication Date: 2017-08-01
- Inventor: Joel P. DeSouza , Keith E. Fogel , Jeehwan Kim , Ko-Tao Lee , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/227
- IPC: H01L29/227 ; H01L29/267 ; H01L29/66 ; H01L29/78 ; H01L29/861 ; H01L21/02 ; H01L21/477 ; H01L21/465
Abstract:
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type layer is formed on or in the p-doped layer. The n-type layer includes ZnO on the p-doped layer to form an electronic device.
Public/Granted literature
- US20160190260A1 DOPED ZINC OXIDE AS N+ LAYER FOR SEMICONDUCTOR DEVICES Public/Granted day:2016-06-30
Information query
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