Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15175045Application Date: 2016-06-07
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Publication No.: US09722030B1Publication Date: 2017-08-01
- Inventor: Ming-Shiou Hsieh , Chun-Yao Yang , Shi-You Liu , Rong-Sin Lin , Han-Ting Yen , Yi-Wei Chen , I-Cheng Hu , Yu-Shu Lin , Neng-Hui Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610313243 20160512
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L29/167 ; H01L23/528 ; H01L23/532 ; H01L21/265 ; H01L21/324 ; H01L21/768 ; H01L27/088
Abstract:
A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.
Information query
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