- Patent Title: Semiconductor light emitting device and fabricating method thereof
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Application No.: US14949893Application Date: 2015-11-24
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Publication No.: US09721931B2Publication Date: 2017-08-01
- Inventor: Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW104120507A 20150625
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L25/075 ; H01L23/00 ; H01L33/62

Abstract:
A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.
Public/Granted literature
- US20160211415A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2016-07-21
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