Recrystallization and grain growth of an interconnect metal, such as Cu, is achieved at higher anneal temperatures of 150° C. to 600° C., for example, for short anneal times of five to 180 minutes by forming a metal stress locking layer on the interconnect metal before anneal and chemical-mechanical polishing. The stress locking layer extends the elastic region of the interconnect metal by suppressing atom diffusion to the free surface, resulting in near zero tensile stress at room temperature after anneal. Stress voiding, which creates reliability problems, is thereby avoided. Improved grain size and texture are also achieved. The stress locking layer is removed after anneal by chemical-mechanical polishing or wet etching leaving the metal interconnect with low stress and improved grain size and texture. Annealing can be done in a forming gas or nitrogen gas atmosphere.