Invention Grant
- Patent Title: Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding
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Application No.: US13834329Application Date: 2013-03-15
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Publication No.: US09721832B2Publication Date: 2017-08-01
- Inventor: Alexander A. Ned , Sorin Stefanescu , Joseph R. Vandeweert
- Applicant: Kulite Semiconductor Products, Inc.
- Applicant Address: US NJ Leonia
- Assignee: Kulite Semiconductor Products, Inc.
- Current Assignee: Kulite Semiconductor Products, Inc.
- Current Assignee Address: US NJ Leonia
- Agency: Troutman Sanders LLP
- Agent James E. Schutz; Christopher C. Close, Jr.
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/12 ; H01L27/146 ; H01L31/18 ; H01L23/00
Abstract:
A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.
Public/Granted literature
- US20140273399A1 METHODS OF FABRICATING SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES USING BLANKET FUSION BONDING Public/Granted day:2014-09-18
Information query
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