Invention Grant
- Patent Title: Method for manufacturing a semiconductor device having an oxide semiconductor layer
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Application No.: US14996409Application Date: 2016-01-15
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Publication No.: US09721811B2Publication Date: 2017-08-01
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-277078 20091204
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/465 ; H01L21/28 ; H01L29/04 ; H01L29/66 ; H01L29/786 ; H01L21/02 ; H01L21/477
Abstract:
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Public/Granted literature
- US20160204231A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-07-14
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