Invention Grant
- Patent Title: Method of forming gettering layer
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Application No.: US14029225Application Date: 2013-09-17
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Publication No.: US09721809B2Publication Date: 2017-08-01
- Inventor: Hiroshi Morikazu , Nao Hattori
- Applicant: Disco Corporation
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2012-206509 20120920
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L21/322
Abstract:
Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width corresponding to a thermal diffusion length of 10 to 230 nm, to thereby form the gettering layer.
Public/Granted literature
- US20140080289A1 METHOD OF FORMING GETTERING LAYER Public/Granted day:2014-03-20
Information query
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