Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15041820Application Date: 2016-02-11
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Publication No.: US09721797B2Publication Date: 2017-08-01
- Inventor: Young Ho Yang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0134203 20150922
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/06 ; H01L29/167 ; H01L21/28 ; H01L29/423 ; H01L27/11521 ; H01L21/02 ; H01L21/768 ; H01L23/532 ; H01L21/311 ; H01L27/11556
Abstract:
A semiconductor device and a method for forming the same. The semiconductor device includes a tunnel insulating layer, a charge storage layer including a dopant, and a diffusion barrier layer including at least one of carbon, nitrogen, or oxygen interposed between the tunnel insulating layer and the charge storage layer.
Public/Granted literature
- US20170084748A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-23
Information query
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