Invention Grant
- Patent Title: Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget
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Application No.: US14923035Application Date: 2015-10-26
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Publication No.: US09721796B2Publication Date: 2017-08-01
- Inventor: Hiroaki Niimi , James Joseph Chambers
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L29/49 ; H01L29/51 ; H01L21/8238 ; H01L29/78
Abstract:
A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.
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