Invention Grant
- Patent Title: Compensated photonic device structure and fabrication method thereof
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Application No.: US14326250Application Date: 2014-07-08
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Publication No.: US09698296B2Publication Date: 2017-07-04
- Inventor: Mengyuan Huang , Liangbo Wang , Su Li , Tuo Shi , Pengfei Cai , Wang Chen , Ching-yin Hong , Dong Pan
- Applicant: SiFotonics Technologies Co., Ltd.
- Applicant Address: US MA Woburn
- Assignee: SIFOTONICS TECHNOLOGIES CO., LTD.
- Current Assignee: SIFOTONICS TECHNOLOGIES CO., LTD.
- Current Assignee Address: US MA Woburn
- Agency: Han IP Corporation
- Agent Andy M. Han
- Main IPC: H01L31/109
- IPC: H01L31/109 ; H01L31/107 ; H01L31/105

Abstract:
Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.
Public/Granted literature
- US20150008433A1 Compensated Photonic Device Structure And Fabrication Method Thereof Public/Granted day:2015-01-08
Information query
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