Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US15015116Application Date: 2016-02-03
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Publication No.: US09698231B2Publication Date: 2017-07-04
- Inventor: Hyun Namkoong , Dong-Kyum Kim , Jung-Hwan Kim , Jung Geun Jee , Han-Vit Yang , Ji-Man Yoo
- Applicant: Hyun Namkoong , Dong-Kyum Kim , Jung-Hwan Kim , Jung Geun Jee , Han-Vit Yang , Ji-Man Yoo
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0045245 20150331
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/336 ; H01L29/423 ; H01L21/28 ; H01L29/66 ; H01L29/788 ; H01L27/11519 ; H01L27/11521 ; H01L27/11565 ; H01L27/11582
Abstract:
A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.
Public/Granted literature
- US20160293618A1 SEMICONDUCTOR DEVICES Public/Granted day:2016-10-06
Information query
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