Invention Grant
- Patent Title: Fabrication of III-V-on-insulator platforms for semiconductor devices
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Application No.: US14591076Application Date: 2015-01-07
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Publication No.: US09698046B2Publication Date: 2017-07-04
- Inventor: Anirban Basu , Bahman Hekmatshoartabari , Ali Khakifirooz , Davood Shahrjerdi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Steven F. McDaniel
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/762 ; H01L21/02 ; H01L29/06 ; H01L21/265 ; H01L29/66 ; H01L29/20
Abstract:
Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to one embodiment, compositionally-graded buffer layers of III-V alloy are grown on a silicon substrate, and a smart cut technique is used to cut and transfer one or more layers of III-V alloy to a silicon wafer having an insulator layer such as an oxide. One or more transferred layers of III-V alloy can be etched away to expose a desired transferred layer of III-V alloy, upon which a semi-insulating buffer layer and channel layer can be grown to yield IIIVOI platform on which semiconductor devices (e.g., planar and/or 3-dimensional FETs) can be fabricated.
Public/Granted literature
- US20160196972A1 FABRICATION OF III-V-ON-INSULATOR PLATFORMS FOR SEMICONDUCTOR DEVICES Public/Granted day:2016-07-07
Information query
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