Invention Grant
- Patent Title: Method for generating parameter pattern, ion implantation method and feed forward semiconductor manufacturing method
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Application No.: US14632719Application Date: 2015-02-26
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Publication No.: US09697989B2Publication Date: 2017-07-04
- Inventor: Cheng-Ta Wu , Tsung Han Wu , Yao-Wen Hsu , Lun-Kuang Tan , Wei-Ming You , Ting-Chun Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G21K5/10
- IPC: G21K5/10 ; H01J37/317 ; H01J37/302 ; H01J37/304

Abstract:
The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.
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