Invention Grant
- Patent Title: Band gap reference circuit
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Application No.: US14967452Application Date: 2015-12-14
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Publication No.: US09696746B2Publication Date: 2017-07-04
- Inventor: Yuan-Long Siao
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW
- Agency: Cooper Legal Group, LLC
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/30

Abstract:
A band gap reference circuit is provided that includes a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (Ra), a fifth resistor (Rb), a capacitor (Ca), an operational amplifier A, a first field effect transistor (FET) (P1), a second FET (P2), a third FET (P3), a fourth FET (Pa), a first bipolar junction transistor (BJT) (Q1), a second BJT (Q2), and a third BJT (Q3). P3 and Rb are used to control Pa, which is configured to control current flow to a reference node, and thus a reference voltage (Vref) output by the band gap reference circuit. The band gap reference circuit is configured to output a substantially constant reference voltage and is less sensitive or susceptible to noise from a power supply. Additionally, the band gap reference circuit prevents Vref from overshooting when the band gap circuit is enabled.
Public/Granted literature
- US20160098056A1 BAND GAP REFERENCE CIRCUIT Public/Granted day:2016-04-07
Information query
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