Invention Grant
- Patent Title: Photoresist pattern trimming compositions and methods
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Application No.: US14971087Application Date: 2015-12-16
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Publication No.: US09696629B2Publication Date: 2017-07-04
- Inventor: Irvinder Kaur , Cong Liu , Kevin Rowell
- Applicant: Rohm and Haas Electronic Materials LLC
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent Jonathan D. Baskin
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/42 ; G03F7/004 ; C07C309/01 ; C07C309/28 ; C07C309/33 ; C07C309/39 ; C07C309/40 ; G03F7/039 ; G03F7/38 ; G03F7/20 ; G03F7/40
Abstract:
Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Public/Granted literature
- US20160187783A1 PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS Public/Granted day:2016-06-30
Information query
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