Invention Grant
- Patent Title: Flip chip light emitting diode and method for manufacturing the same
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Application No.: US14692455Application Date: 2015-04-21
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Publication No.: US09680059B2Publication Date: 2017-06-13
- Inventor: Ching-Hsueh Chiu , Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agent Steven Reiss
- Priority: CN201410167575 20140424
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/00 ; H01L21/302 ; H01L33/22 ; H01L33/44 ; G02B1/11

Abstract:
A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.
Public/Granted literature
- US20150311413A1 FLIP CHIP LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-10-29
Information query
IPC分类: