Invention Grant
- Patent Title: Increased contact area for FinFETs
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Application No.: US14794997Application Date: 2015-07-09
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Publication No.: US09680020B2Publication Date: 2017-06-13
- Inventor: Veeraraghavan S. Basker , Chung-Hsun Lin , Zuoguang Liu , Tenko Yamashita , Chun-Chen Yeh
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L21/311 ; H01L21/3065 ; H01L29/417 ; H01L29/08
Abstract:
A method for forming fin field effect transistors includes epitaxially growing source and drain (S/D) regions on fins, the S/D regions including a diamond-shaped cross section and forming a dielectric liner over the S/D regions. A dielectric fill is etched over the S/D regions to expose a top portion of the diamond-shaped cross section. The fins are recessed into the diamond-shaped cross section. A top portion of the diamond-shaped cross section of the S/D regions is exposed. A contact liner is formed on the top portion of the diamond-shaped cross section of the S/D regions and in a recess where the fins were recessed. Contacts are formed over surfaces of the top portion and in the recess.
Public/Granted literature
- US20170012129A1 INCREASED CONTACT AREA FOR FINFETS Public/Granted day:2017-01-12
Information query
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