Invention Grant
- Patent Title: Semiconductor device, manufacturing method thereof, and electronic apparatus
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Application No.: US15211985Application Date: 2016-07-15
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Publication No.: US09679938B2Publication Date: 2017-06-13
- Inventor: Hiroshi Takahashi , Taku Umebayashi
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2009-249327 20091029
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/768 ; H01L23/48 ; H01L23/00 ; H01L31/02 ; H01L31/0203 ; H01L31/0232 ; H01L31/18 ; H01L21/762

Abstract:
A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.
Public/Granted literature
- US20160329370A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS Public/Granted day:2016-11-10
Information query
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