Invention Grant
- Patent Title: Cascode power transistors
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Application No.: US14690637Application Date: 2015-04-20
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Publication No.: US09679880B2Publication Date: 2017-06-13
- Inventor: Kentaro Ikeda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-140040 20140707
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00 ; H03K17/0812 ; H03K17/16 ; H03K17/687 ; H03K17/74

Abstract:
A semiconductor device according to an embodiment includes a normally off transistor having a first source, a first drain, a first gate connected to a common gate terminal, and a body diode, a normally on transistor having a second source connected to the first drain, a second drain, and a second gate, a capacitor provided between the common gate terminal and the second gate, a first diode having a first anode connected to between the capacitor and the second gate and a first cathode connected to the first source, and a second diode having a second anode connected to the first source and a second cathode connected to the second drain.
Public/Granted literature
- US20160005725A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
Information query
IPC分类: